Abstract: The proliferation of machine-learning workloads has accelerated the demand for higher memory bandwidth in modern systems. HBM DRAM was developed to break through the system-performance limit ...
Abstract: In this article, we propose InxGa1−xAs gate-all-around (GAA) MOSFET where In0.53Ga0.47As is used as channel. These devices excel in their ability to precisely modulate the electric field ...
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